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| FDB8445 N-Channel PowerTrench(R) MOSFET January 2006 FDB8445 N-Channel PowerTrench(R) MOSFET 40V, 70A, 9m Features Typ rDS(on) = 6.8m at VGS = 10V, ID = 70A Typ Qg(10) = 44nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant LE A REE I DF Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Transmission Distributed Power Architecture and VRMs Primary Switch for 12V Systems M ENTATIO LE N MP D GATE G SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) S (c)2006 Fairchild Semiconductor Corporation FDB8445 Rev A1 (W) 1 www.fairchildsemi.com FDB8445 N-Channel PowerTrench(R) MOSFET Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC Operating and Storage Temperature (Note 2) (Note 1) Ratings 40 20 70 Figure 4 102 92 0.6 -55 to +175 mJ W W/oC o Units V V A C Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-263, area 1in2 copper pad 1.63 43 oC/W oC/W Package Marking and Ordering Information Device Marking FDB8445 Device FDB8445 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 32V VGS = 0V VGS = 20V TJ =150C 40 1 250 100 V A A nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VDS = VGS, ID = 250A ID = 70A, VGS = 10V ID = 70A, VGS = 10V, TJ = 175C 2 2.5 6.8 13 4 9 17.2 m V Dynamic Characteristics Ciss Coss Crss RG Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain Charge VDS = 25V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 10V VGS = 0 to 2V VDS= 20V, ID = 70A, 2860 295 180 1.95 44 2.9 11 8.2 11 3805 395 270 62 4.1 pF pF pF W nC nC nC nC nC 2 FDB8445 Rev A1 (W) www.fairchildsemi.com FDB8445 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 20V, ID = 70A VGS = 10V, RGS = 5 10 19 36 16 45 81 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 70A ISD = 35A IF = 70A, di/dt = 100A/s IF = 70A, di/dt = 100A/s 1.25 1.0 59 77 V V ns nC Notes: 1: Maximum wire current carrying capacity is 70A. 2: Starting TJ = 25oC, L = 65H, IAS = 56A. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 3 FDB8445 Rev A1 (W) www.fairchildsemi.com FDB8445 N-Channel PowerTrench(R) MOSFET Typical Characteristics POWER DISSIPATION MULIPLIER 1.2 ID, DRAIN CURRENT (A) 100 CURRENT LIMITED BY WIRE VGS = 10V 1.0 0.8 0.6 0.4 0.2 0.0 80 60 40 20 0 25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Case Temperature PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 0.01 -5 10 10 -4 Figure 3. Normalized Maximum Transient Thermal Impedance 2000 1000 IDM, PEAK CURRENT (A) TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 100 VGS = 10V SINGLE PULSE 10 -5 10 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 4. Peak Current Capability 4 FDB8445 Rev A1 (W) www.fairchildsemi.com FDB8445 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1000 10us 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 100us 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 SINGLE PULSE TJ = MAX RATED TC = 25oC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10 STARTING TJ = 150oC STARTING TJ = 25oC 1 1ms 10ms DC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 0.01 0.1 1 10 100 400 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability 140 VGS = 10V 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0 2.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VDD = 5V 120 100 80 60 40 20 0 0 VGS = 5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 4.5V TJ = 175oC TJ = 25oC TJ = -55oC VGS = 4V VGS = 3.5V 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS, GATE TO SOURCE VOLTAGE (V) 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics ID = 70A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 70A VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 16 TJ = 175oC 12 8 TJ = 25oC 4 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 5 10 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 9. On-Resistance vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 FDB8445 Rev A1 (W) www.fairchildsemi.com FDB8445 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1.2 1.1 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250A 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.10 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 Ciss Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 9 8 7 6 5 4 3 2 1 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 ID = 70A VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) VDD = 15V VDD = 20V VDD = 25V 1000 Coss f = 1MHz VGS = 0V Crss 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage 6 FDB8445 Rev A1 (W) www.fairchildsemi.com FDB8445 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I17 FDB8445 Rev A1 (W) 7 www.fairchildsemi.com |
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